HGI059N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGI059N08A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 94 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 89 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 502 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de HGI059N08A MOSFET
HGI059N08A Datasheet (PDF)
hgd059n08a hgi059n08a.pdf

, P-1HGD059N08AHGI059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability89 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circu
hgd059n08al hgi059n08al.pdf

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
hgd053n06sl hgi053n06sl.pdf

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication
hgi050n10al.pdf

HGI050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness112 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPSTO-251 Hard Switching and Hig
Otros transistores... HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , IRF830 , HGD059N08AL , HGI059N08AL , HGD077N10SL , HGI077N10SL , HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL .
History: WFP640 | HY4306B6 | 2SK1478 | IXFT12N100F | BRFL13N50 | 2SK65 | CEF02N6G
History: WFP640 | HY4306B6 | 2SK1478 | IXFT12N100F | BRFL13N50 | 2SK65 | CEF02N6G



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet | 2n2222 data sheet | irf3205 datasheet | oc71 | njw0302g