HGI059N08A - Даташиты. Аналоги. Основные параметры
Наименование производителя: HGI059N08A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 89 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 502 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
Тип корпуса: TO-251
Аналог (замена) для HGI059N08A
HGI059N08A Datasheet (PDF)
hgd059n08a hgi059n08a.pdf

, P-1HGD059N08AHGI059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability89 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circu
hgd059n08al hgi059n08al.pdf

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
hgd053n06sl hgi053n06sl.pdf

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication
hgi050n10al.pdf

HGI050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness112 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPSTO-251 Hard Switching and Hig
Другие MOSFET... HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , IRF830 , HGD059N08AL , HGI059N08AL , HGD077N10SL , HGI077N10SL , HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL .
History: IRFB4310ZGPBF | VSA007N02KD | 2SK2272-01R | 2SK630 | 2SK615 | KMB8D0P30Q | BLP02N06-D
History: IRFB4310ZGPBF | VSA007N02KD | 2SK2272-01R | 2SK630 | 2SK615 | KMB8D0P30Q | BLP02N06-D



Список транзисторов
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