HGN021N06SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN021N06SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 114 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1670 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: DFN5X6

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HGN021N06SL datasheet

 ..1. Size:772K  cn hunteck
hgn021n06sl.pdf pdf_icon

HGN021N06SL

HGN021N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 1.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 172 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 85 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.1. Size:901K  cn hunteck
hgn023ne6a.pdf pdf_icon

HGN021N06SL

HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi

 9.2. Size:763K  cn hunteck
hgn027n06s.pdf pdf_icon

HGN021N06SL

HGN027N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 152 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 9.3. Size:905K  cn hunteck
hgn028ne6a.pdf pdf_icon

HGN021N06SL

HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi

Otros transistores... HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, SI2302, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A, HGN028NE6AL