HGN022NE4SL Todos los transistores

 

HGN022NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN022NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1829 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN022NE4SL Datasheet (PDF)

 ..1. Size:762K  cn hunteck
 hgn022ne4sl.pdf pdf_icon

HGN022NE4SL

HGN022NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level1.85RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.35RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness169 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchrono

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN022NE4SL

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 9.2. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN022NE4SL

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.3. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN022NE4SL

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

MOSTRAR MÁS

Otros transistores... HGM120N10AL , HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , HGN012N03AL , HGN016N04BL , HGN021N06SL , 7N60 , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL .

History: LSF60R240HT | HY4306B6 | BRFL13N50 | 2SK1478 | IXFT12N100F | 2SK65 | CEF02N6G

 

 
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