HGN022NE4SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN022NE4SL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 1829 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Encapsulados: DFN5X6
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HGN022NE4SL datasheet
hgn022ne4sl.pdf
HGN022NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 1.85 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.35 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 169 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchrono
hgn023ne6a.pdf
HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi
hgn027n06s.pdf
HGN027N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 152 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch
hgn028ne6a.pdf
HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi
Otros transistores... HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL, AO3407, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A, HGN028NE6AL, HGN029NE4SL
History: HGN029NE4SL | TK16N60W
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