HGN022NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGN022NE4SL
   Código: GN022NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1829 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET HGN022NE4SL

HGN022NE4SL Datasheet (PDF)

..1. Size:762K cn hunteck
hgn022ne4sl.pdf

HGN022NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level1.85RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.35RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness169 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchrono

9.1. Size:901K cn hunteck
hgn023ne6a.pdf

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

9.2. Size:763K cn hunteck
hgn027n06s.pdf

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

9.3. Size:905K cn hunteck
hgn028ne6a.pdf

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

9.4. Size:772K cn hunteck
hgn021n06sl.pdf

HGN021N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level1.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness172 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested85 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.5. Size:771K cn hunteck
hgn024n06sl.pdf

HGN024N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness161 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.6. Size:908K cn hunteck
hgn028n08a.pdf

HGN028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability147 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

9.7. Size:905K cn hunteck
hgn028ne6al.pdf

HGN028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness129 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeDrainApplication Synchron

9.8. Size:1142K cn hunteck
hgn023ne6al.pdf

HGN023NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching,Logic Level 2.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 AID (Package Limited) Lead Free, Halogen Free Drain Application Sy

9.9. Size:773K cn hunteck
hgn029ne4sl.pdf

HGN029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

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