HGN022NE4SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGN022NE4SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 1829 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN022NE4SL
HGN022NE4SL Datasheet (PDF)
hgn022ne4sl.pdf

HGN022NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level1.85RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.35RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness169 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchrono
hgn023ne6a.pdf

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi
hgn027n06s.pdf

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch
hgn028ne6a.pdf

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi
Другие MOSFET... HGM120N10AL , HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , HGN012N03AL , HGN016N04BL , HGN021N06SL , 7N60 , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL .
History: RJK0331DPB | ZXM62P02E6 | HM3407A | CHM72A3NGP | 2SK213 | 2SK65 | KNU4820B
History: RJK0331DPB | ZXM62P02E6 | HM3407A | CHM72A3NGP | 2SK213 | 2SK65 | KNU4820B



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