HGN023NE6AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN023NE6AL
Código: GN023NE6AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 119 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 86 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 1788 pF
Resistencia entre drenaje y fuente RDS(on): 0.0025 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET HGN023NE6AL
HGN023NE6AL Datasheet (PDF)
hgn023ne6al.pdf
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HGN023NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching,Logic Level 2.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 AID (Package Limited) Lead Free, Halogen Free Drain Application Sy
hgn023ne6a.pdf
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HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi
hgn027n06s.pdf
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HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch
hgn028ne6a.pdf
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HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi
hgn021n06sl.pdf
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HGN021N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level1.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness172 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested85 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn024n06sl.pdf
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HGN024N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness161 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn028n08a.pdf
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HGN028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability147 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi
hgn022ne4sl.pdf
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HGN022NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level1.85RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.35RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness169 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchrono
hgn028ne6al.pdf
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HGN028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness129 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeDrainApplication Synchron
hgn029ne4sl.pdf
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HGN029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![HGN023NE6AL](https://alltransistors.com/images/us.png)
![HGN023NE6AL](https://alltransistors.com/images/es.png)
![HGN023NE6AL](https://alltransistors.com/images/ru.png)
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