HGN023NE6AL Todos los transistores

 

HGN023NE6AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN023NE6AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 119 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1788 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

HGN023NE6AL Datasheet (PDF)

 ..1. Size:1142K  cn hunteck
 hgn023ne6al.pdf pdf_icon

HGN023NE6AL

HGN023NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching,Logic Level 2.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 AID (Package Limited) Lead Free, Halogen Free Drain Application Sy

 4.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN023NE6AL

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 9.1. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN023NE6AL

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.2. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN023NE6AL

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3620DP-G | 2SJ152

 

 
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