HGN028N08A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGN028N08A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 119 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1003 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de HGN028N08A MOSFET
- Selecciónⓘ de transistores por parámetros
HGN028N08A datasheet
hgn028n08a.pdf
HGN028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 147 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi
hgn028ne6a.pdf
HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi
hgn028ne6al.pdf
HGN028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 129 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Drain Application Synchron
hgn023ne6a.pdf
HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi
Otros transistores... HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, STF13NM60N, HGN028NE6A, HGN028NE6AL, HGN029NE4SL, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL
History: HGN024N06SL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q | ASDM30N120Q | ASDM30N120KQ | ASDM30N100KQ | ASDM30DN40E | ASDM30DN30E | ASDM3050KQ | ASDM2305 | ASDM2301 | ASDM2300ZA | ASDM20P13S | ASDM20N90Q | ASDM20N60
Popular searches
k3568 datasheet | 2sb77 | ac128 transistor datasheet | c2878 transistor | 2sc732 | 2sc1451 replacement | 6426 mosfet | b1565
