HGN028NE6AL Datasheet. Equivalente

 ..1. Size:905K  cn hunteck
 hgn028ne6al.pdf

HGN028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 129 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Drain Application Synchron

 4.1. Size:905K  cn hunteck
 hgn028ne6a.pdf

HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi

 7.1. Size:908K  cn hunteck
 hgn028n08a.pdf

HGN028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 147 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf

HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi

 9.2. Size:763K  cn hunteck
 hgn027n06s.pdf

HGN027N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 152 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 9.3. Size:772K  cn hunteck
 hgn021n06sl.pdf

HGN021N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 1.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 172 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 85 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.4. Size:771K  cn hunteck
 hgn024n06sl.pdf

HGN024N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 2.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 161 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.5. Size:762K  cn hunteck
 hgn022ne4sl.pdf

HGN022NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 1.85 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.35 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 169 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchrono

 9.6. Size:1142K  cn hunteck
 hgn023ne6al.pdf

HGN023NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching,Logic Level 2.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Drain Application Sy

 9.7. Size:773K  cn hunteck
 hgn029ne4sl.pdf

HGN029NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 2.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 3.2 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 140 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn