HGN028NE6AL Todos los transistores

 

HGN028NE6AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN028NE6AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN028NE6AL Datasheet (PDF)

 ..1. Size:905K  cn hunteck
 hgn028ne6al.pdf pdf_icon

HGN028NE6AL

HGN028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness129 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeDrainApplication Synchron

 4.1. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN028NE6AL

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

 7.1. Size:908K  cn hunteck
 hgn028n08a.pdf pdf_icon

HGN028NE6AL

HGN028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability147 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN028NE6AL

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

MOSTRAR MÁS

Otros transistores... HGN021N06SL , HGN022NE4SL , HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , IRF830 , HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL .

 

 
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