HGN028NE6AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HGN028NE6AL
Маркировка: GN028NE6AL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 68 nC
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1625 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN028NE6AL
HGN028NE6AL Datasheet (PDF)
hgn028ne6al.pdf
HGN028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness129 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeDrainApplication Synchron
hgn028ne6a.pdf
HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi
hgn028n08a.pdf
HGN028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability147 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi
hgn023ne6a.pdf
HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi
hgn027n06s.pdf
HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch
hgn021n06sl.pdf
HGN021N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level1.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness172 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested85 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn024n06sl.pdf
HGN024N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness161 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn022ne4sl.pdf
HGN022NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level1.85RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.35RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness169 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchrono
hgn023ne6al.pdf
HGN023NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching,Logic Level 2.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 164 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 AID (Package Limited) Lead Free, Halogen Free Drain Application Sy
hgn029ne4sl.pdf
HGN029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
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Список транзисторов
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