HGN035N10AL Todos los transistores

 

HGN035N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN035N10AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 939 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN035N10AL Datasheet (PDF)

 ..1. Size:958K  cn hunteck
 hgn035n10al.pdf pdf_icon

HGN035N10AL

P-1HGN035N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness149 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

 4.1. Size:955K  cn hunteck
 hgn035n10a.pdf pdf_icon

HGN035N10AL

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 7.1. Size:916K  cn hunteck
 hgn035n08al.pdf pdf_icon

HGN035N10AL

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

 7.2. Size:908K  cn hunteck
 hgn035n08a.pdf pdf_icon

HGN035N10AL

HGN035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3RDS(on),typ mW Enhanced Body diode dv/dt capability121 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High

MOSTRAR MÁS

Otros transistores... HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , IRFZ48N , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL .

History: FDS7079ZN3 | ELM5E402PA | 1N60L-AB3-R | IXFR32N80P

 

 
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