Справочник MOSFET. HGN035N10AL

 

HGN035N10AL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HGN035N10AL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 939 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для HGN035N10AL

   - подбор ⓘ MOSFET транзистора по параметрам

 

HGN035N10AL Datasheet (PDF)

 ..1. Size:958K  cn hunteck
hgn035n10al.pdfpdf_icon

HGN035N10AL

P-1HGN035N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness149 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

 4.1. Size:955K  cn hunteck
hgn035n10a.pdfpdf_icon

HGN035N10AL

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 7.1. Size:916K  cn hunteck
hgn035n08al.pdfpdf_icon

HGN035N10AL

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

 7.2. Size:908K  cn hunteck
hgn035n08a.pdfpdf_icon

HGN035N10AL

HGN035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3RDS(on),typ mW Enhanced Body diode dv/dt capability121 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High

Другие MOSFET... HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , IRFZ48N , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL .

History: TJ10S04M3L | APT50M60L2VRG | HM9435B | ME80N08AH-G | LSB60R030HT | DMP4050SSD | DMP2004K

 

 
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