HGN042N10S Todos los transistores

 

HGN042N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN042N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1066 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN042N10S Datasheet (PDF)

 ..1. Size:1155K  cn hunteck
 hgn042n10s.pdf pdf_icon

HGN042N10S

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching

 0.1. Size:1077K  cn hunteck
 hgn042n10sl.pdf pdf_icon

HGN042N10S

P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 5.1. Size:786K  cn hunteck
 hgn042n10al.pdf pdf_icon

HGN042N10S

HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 5.2. Size:777K  cn hunteck
 hgn042n10a.pdf pdf_icon

HGN042N10S

HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and

MOSTRAR MÁS

Otros transistores... HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL , EMB04N03H , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL , HGN050N10A , HGN050N10AL , HGN052N10SL , HGN053N06S .

History: FTK12N65P | NCE70T1K2F | AOB15S65L | SIHFDC20 | DH100P18E | HGS230N10AL | CS12N60A8H

 

 
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