HGN050N10AL Todos los transistores

 

HGN050N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN050N10AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 562 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN050N10AL Datasheet (PDF)

 ..1. Size:902K  cn hunteck
 hgn050n10al.pdf pdf_icon

HGN050N10AL

HGN050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level4.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness103 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

 4.1. Size:898K  cn hunteck
 hgn050n10a.pdf pdf_icon

HGN050N10AL

P-1HGN050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching4.5RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Silicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

 9.1. Size:902K  cn hunteck
 hgn053n06s.pdf pdf_icon

HGN050N10AL

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.2. Size:891K  cn hunteck
 hgn059n08a.pdf pdf_icon

HGN050N10AL

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

MOSTRAR MÁS

Otros transistores... HGN042N10A , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL , HGN050N10A , AO3407 , HGN052N10SL , HGN053N06S , HGN053N06SL , HGN055N12S , HGN055N12SL , HGN058N08SL , HGN059N08A , HGN059N08AL .

History: NCE65N330R | PMN230ENEA | AOB414

 

 
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