HGN050N10AL Datasheet. Specs and Replacement

Type Designator: HGN050N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 562 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6

HGN050N10AL substitution

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HGN050N10AL datasheet

 ..1. Size:902K  cn hunteck
hgn050n10al.pdf pdf_icon

HGN050N10AL

HGN050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.7 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 103 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectific... See More ⇒

 4.1. Size:898K  cn hunteck
hgn050n10a.pdf pdf_icon

HGN050N10AL

P-1 HGN050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability 102 A ID (Silicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir... See More ⇒

 9.1. Size:902K  cn hunteck
hgn053n06s.pdf pdf_icon

HGN050N10AL

HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching... See More ⇒

 9.2. Size:891K  cn hunteck
hgn059n08a.pdf pdf_icon

HGN050N10AL

HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

Detailed specifications: HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, HGN046NE6A, HGN046NE6AL, HGN050N10A, AO4407A, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S, HGN055N12SL, HGN058N08SL, HGN059N08A, HGN059N08AL

Keywords - HGN050N10AL MOSFET specs

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