All MOSFET. HGN050N10AL Datasheet

 

HGN050N10AL Datasheet and Replacement


   Type Designator: HGN050N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 562 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN5X6
 

 HGN050N10AL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGN050N10AL Datasheet (PDF)

 ..1. Size:902K  cn hunteck
 hgn050n10al.pdf pdf_icon

HGN050N10AL

HGN050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level4.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness103 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

 4.1. Size:898K  cn hunteck
 hgn050n10a.pdf pdf_icon

HGN050N10AL

P-1HGN050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching4.5RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Silicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

 9.1. Size:902K  cn hunteck
 hgn053n06s.pdf pdf_icon

HGN050N10AL

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.2. Size:891K  cn hunteck
 hgn059n08a.pdf pdf_icon

HGN050N10AL

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

SHOW MORE

Datasheet: HGN042N10A , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL , HGN050N10A , AO3407 , HGN052N10SL , HGN053N06S , HGN053N06SL , HGN055N12S , HGN055N12SL , HGN058N08SL , HGN059N08A , HGN059N08AL .

History: PMBFJ310 | IXTH30N45 | IRC8305 | P0603BDD

Keywords - HGN050N10AL MOSFET datasheet

 HGN050N10AL cross reference
 HGN050N10AL equivalent finder
 HGN050N10AL lookup
 HGN050N10AL substitution
 HGN050N10AL replacement

 

 
Back to Top

 


 
.