FDS8949F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS8949F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7.7 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SO-8

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FDS8949F085 Datasheet (PDF)

7.1. Size:539K fairchild semi
fds8949 f085.pdf

February 2010FDS8949_F085tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

7.2. Size:345K fairchild semi
fds8949.pdf

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

7.3. Size:454K onsemi
fds8949-f085.pdf

FDS8949-F085Dual N-Channel Logic Level PowerTrench MOSFET40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing ON Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5VPowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

7.4. Size:345K onsemi
fds8949.pdf

7.5. Size:1560K cn vbsemi
fds8949.pdf

FDS8949www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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