FDS8949F085 Todos los transistores

 

FDS8949F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8949F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO-8

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FDS8949F085 datasheet

 7.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8949F085

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 7.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8949F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 7.3. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8949F085

FDS8949-F085 Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using ON Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 7.4. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8949F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

MOSTRAR MÁS

Otros transistores... SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , STP65NF06 , FDS8958AF085 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B .

 

 

 

 

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