All MOSFET. FDS8949F085 Datasheet

 

FDS8949F085 Datasheet and Replacement


   Type Designator: FDS8949F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO-8
 

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FDS8949F085 Datasheet (PDF)

 7.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8949F085

February 2010FDS8949_F085tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 7.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8949F085

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 7.3. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8949F085

FDS8949-F085Dual N-Channel Logic Level PowerTrench MOSFET40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing ON Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5VPowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 7.4. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8949F085

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

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Datasheet: SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , IRF1405 , FDS8958AF085 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B .

History: JCS4N60CB | STU466S

Keywords - FDS8949F085 MOSFET datasheet

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