HGN055N12SL Todos los transistores

 

HGN055N12SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN055N12SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

HGN055N12SL Datasheet (PDF)

 ..1. Size:902K  cn hunteck
 hgn055n12sl.pdf pdf_icon

HGN055N12SL

P-1HGN055N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic Level4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness96 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectifica

 4.1. Size:892K  cn hunteck
 hgn055n12s.pdf pdf_icon

HGN055N12SL

P-1HGN055N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.8RDS(on),typ mW Enhanced Body diode dv/dt capability111 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High S

 9.1. Size:902K  cn hunteck
 hgn053n06s.pdf pdf_icon

HGN055N12SL

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.2. Size:891K  cn hunteck
 hgn059n08a.pdf pdf_icon

HGN055N12SL

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

MOSTRAR MÁS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXTP50N28T | 3SK249

 

 
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