HGN055N12SL Datasheet. Specs and Replacement

Type Designator: HGN055N12SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN5X6

HGN055N12SL substitution

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HGN055N12SL datasheet

 ..1. Size:902K  cn hunteck
hgn055n12sl.pdf pdf_icon

HGN055N12SL

P-1 HGN055N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic Level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 96 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectifica... See More ⇒

 4.1. Size:892K  cn hunteck
hgn055n12s.pdf pdf_icon

HGN055N12SL

P-1 HGN055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 111 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High S... See More ⇒

 9.1. Size:902K  cn hunteck
hgn053n06s.pdf pdf_icon

HGN055N12SL

HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching... See More ⇒

 9.2. Size:891K  cn hunteck
hgn059n08a.pdf pdf_icon

HGN055N12SL

HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

Detailed specifications: HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S, IRFZ44N, HGN058N08SL, HGN059N08A, HGN059N08AL, HGN070N12S, HGN070N12SL, HGN077N10SL, HGN080N08SL, HGN080N10A

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