HGN059N08A Todos los transistores

 

HGN059N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN059N08A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 502 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN059N08A Datasheet (PDF)

 ..1. Size:891K  cn hunteck
 hgn059n08a.pdf pdf_icon

HGN059N08A

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

 0.1. Size:896K  cn hunteck
 hgn059n08al.pdf pdf_icon

HGN059N08A

HGN059N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeDrainApplication Synchron

 9.1. Size:902K  cn hunteck
 hgn053n06s.pdf pdf_icon

HGN059N08A

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.2. Size:781K  cn hunteck
 hgn052n10sl.pdf pdf_icon

HGN059N08A

HGN052N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.6RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6RDS(on),typ VGS=4.5V mswitching,Logic level 115 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Dr

MOSTRAR MÁS

Otros transistores... HGN050N10A , HGN050N10AL , HGN052N10SL , HGN053N06S , HGN053N06SL , HGN055N12S , HGN055N12SL , HGN058N08SL , IRF740 , HGN059N08AL , HGN070N12S , HGN070N12SL , HGN077N10SL , HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S .

History: 2SK681A | TF2301A | OSG60R031HZF | FTK10N60P | ELM544599A | ME4920 | RQK0302GGDQS

 

 
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