HGN059N08A Datasheet. Specs and Replacement

Type Designator: HGN059N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 502 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: DFN5X6

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HGN059N08A datasheet

 ..1. Size:891K  cn hunteck
hgn059n08a.pdf pdf_icon

HGN059N08A

HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

 0.1. Size:896K  cn hunteck
hgn059n08al.pdf pdf_icon

HGN059N08A

HGN059N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 82 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Pacakge Limited) Lead Free, Halogen Free Drain Application Synchron... See More ⇒

 9.1. Size:902K  cn hunteck
hgn053n06s.pdf pdf_icon

HGN059N08A

HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching... See More ⇒

 9.2. Size:781K  cn hunteck
hgn052n10sl.pdf pdf_icon

HGN059N08A

HGN052N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.6 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6 RDS(on),typ VGS=4.5V m switching,Logic level 115 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Dr... See More ⇒

Detailed specifications: HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S, HGN055N12SL, HGN058N08SL, IRF740, HGN059N08AL, HGN070N12S, HGN070N12SL, HGN077N10SL, HGN080N08SL, HGN080N10A, HGN080N10AL, HGN080N10S

Keywords - HGN059N08A MOSFET specs

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