HGN059N08AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGN059N08AL
   Código: GN059N08AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 74 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 43 nC
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 540 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0059 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET HGN059N08AL

HGN059N08AL Datasheet (PDF)

..1. Size:896K cn hunteck
hgn059n08al.pdf

HGN059N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeDrainApplication Synchron

4.1. Size:891K cn hunteck
hgn059n08a.pdf

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

9.1. Size:902K cn hunteck
hgn053n06s.pdf

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

9.2. Size:781K cn hunteck
hgn052n10sl.pdf

HGN052N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.6RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6RDS(on),typ VGS=4.5V mswitching,Logic level 115 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Dr

9.3. Size:898K cn hunteck
hgn050n10a.pdf

P-1HGN050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching4.5RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Silicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

9.4. Size:757K cn hunteck
hgn058n08sl.pdf

HGN058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplication Synchronous Rectification

9.5. Size:902K cn hunteck
hgn055n12sl.pdf

P-1HGN055N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic Level4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness96 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectifica

9.6. Size:902K cn hunteck
hgn050n10al.pdf

HGN050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level4.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness103 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

9.7. Size:775K cn hunteck
hgn053n06sl.pdf

HGN053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness90 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.8. Size:892K cn hunteck
hgn055n12s.pdf

P-1HGN055N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.8RDS(on),typ mW Enhanced Body diode dv/dt capability111 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High S

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