HGN059N08AL MOSFET. Datasheet pdf. Equivalent

   Type Designator: HGN059N08AL
   Marking Code: GN059N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: DFN5X6

HGN059N08AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HGN059N08AL Datasheet (PDF)

..1. Size:896K cn hunteck
hgn059n08al.pdf

HGN059N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeDrainApplication Synchron

4.1. Size:891K cn hunteck
hgn059n08a.pdf

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

9.1. Size:902K cn hunteck
hgn053n06s.pdf

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

9.2. Size:781K cn hunteck
hgn052n10sl.pdf

HGN052N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.6RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6RDS(on),typ VGS=4.5V mswitching,Logic level 115 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Dr

9.3. Size:898K cn hunteck
hgn050n10a.pdf

P-1HGN050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching4.5RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Silicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

9.4. Size:757K cn hunteck
hgn058n08sl.pdf

HGN058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplication Synchronous Rectification

9.5. Size:902K cn hunteck
hgn055n12sl.pdf

P-1HGN055N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic Level4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness96 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectifica

9.6. Size:902K cn hunteck
hgn050n10al.pdf

HGN050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level4.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness103 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

9.7. Size:775K cn hunteck
hgn053n06sl.pdf

HGN053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness90 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.8. Size:892K cn hunteck
hgn055n12s.pdf

P-1HGN055N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.8RDS(on),typ mW Enhanced Body diode dv/dt capability111 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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All MOSFET. HGN059N08AL Datasheet

HGN059N08AL MOSFET. Datasheet pdf. Equivalent

HGN059N08AL Datasheet (PDF)

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