FDS8958AF085 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDS8958AF085 datasheet

6.1. Size:521K fairchild semi
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April 2008 tm FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

6.2. Size:798K fairchild semi
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February 2010 tm FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on

6.3. Size:537K onsemi
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FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1 N-Channel These dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V mode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductor s advanced PowerTrench process that has been especially Q2 P-Channel tailored to m

Otros transistores... FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 , IRF1405 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 .