FDS8958AF085 Datasheet and Replacement. Cross Reference Search

FDS8958AF085 Datasheet (PDF)

6.1. Size:521K fairchild semi
fds8958a.pdf pdf_icon

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

6.2. Size:798K fairchild semi
fds8958a f085.pdf pdf_icon

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on

6.3. Size:537K onsemi
fds8958a-f085.pdf pdf_icon

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m

Datasheet: FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 , IRF9640 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 .