HGN080N10S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN080N10S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 74 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 573 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DFN5X6

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HGN080N10S datasheet

 ..1. Size:912K  cn hunteck
 hgn080n10s.pdf pdf_icon

HGN080N10S

HGN080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 6.7 RDS(on),typ mW Enhanced Avalanche Ruggedness 74 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 0.1. Size:920K  cn hunteck
 hgn080n10sl.pdf pdf_icon

HGN080N10S

HGN080N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re

 5.1. Size:893K  cn hunteck
 hgn080n10al.pdf pdf_icon

HGN080N10S

HGN080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74.4 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 5.2. Size:898K  cn hunteck
 hgn080n10a.pdf pdf_icon

HGN080N10S

P-1 HGN080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 6.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 76 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

MOSTRAR MÁS

Otros transistores... HGN059N08A, HGN059N08AL, HGN070N12S, HGN070N12SL, HGN077N10SL, HGN080N08SL, HGN080N10A, HGN080N10AL, IRF640, HGN080N10SL, HGN088N15S, HGN088N15SL, HGN090AE6AL, HGN090N06SL, HGN090NE6A, HGN090NE6AL, HGN093N12S