HGN080N10S MOSFET. Datasheet pdf. Equivalent

   Type Designator: HGN080N10S
   Marking Code: GN080N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 573 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN5X6

HGN080N10S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS