HGN090AE6AL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN090AE6AL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 518 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: DFN5X6

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HGN090AE6AL datasheet

 ..1. Size:1112K  cn hunteck
 hgn090ae6al.pdf pdf_icon

HGN090AE6AL

HGN090AE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited) Drain1 Drain2 Application

 8.1. Size:764K  cn hunteck
 hgn090n06sl.pdf pdf_icon

HGN090AE6AL

HGN090N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 8.2. Size:1316K  cn hunteck
 hgn090ne6al.pdf pdf_icon

HGN090AE6AL

HGN090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited) Application Drain Syn

 8.3. Size:932K  cn hunteck
 hgn090ne6a.pdf pdf_icon

HGN090AE6AL

HGN090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 54 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and Hig

MOSTRAR MÁS

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