HGN095NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGN095NE4SL
   Código: GN095NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 45 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
   Carga de la puerta (Qg): 14.5 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 309 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0095 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET HGN095NE4SL

HGN095NE4SL Datasheet (PDF)

..1. Size:762K cn hunteck
hgn095ne4sl.pdf

HGN095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level6.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness52 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.1. Size:893K cn hunteck
hgn098n10a.pdf

HGN098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.3RDS(on),typ mW Enhanced Body diode dv/dt capability63 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

9.2. Size:902K cn hunteck
hgn093n12sl.pdf

HGN093N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness71 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

9.3. Size:1175K cn hunteck
hgn098n10al.pdf

HGN098N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited)Application Synch

9.4. Size:764K cn hunteck
hgn090n06sl.pdf

HGN090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

9.5. Size:1316K cn hunteck
hgn090ne6al.pdf

HGN090NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited)Application Drain Syn

9.6. Size:897K cn hunteck
hgn098n10sl.pdf

HGN098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous R

9.7. Size:1187K cn hunteck
hgn099n15s.pdf

HGN099N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 80 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha

9.8. Size:899K cn hunteck
hgn093n12s.pdf

HGN093N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability73 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

9.9. Size:1112K cn hunteck
hgn090ae6al.pdf

HGN090AE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited)Drain1 Drain2 Application

9.10. Size:932K cn hunteck
hgn090ne6a.pdf

HGN090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and Hig

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