HGN095NE4SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN095NE4SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 309 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: DFN5X6

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HGN095NE4SL datasheet

 ..1. Size:762K  cn hunteck
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HGN095NE4SL

HGN095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 6.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 52 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.1. Size:893K  cn hunteck
hgn098n10a.pdf pdf_icon

HGN095NE4SL

HGN098N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 8.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 63 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and H

 9.2. Size:902K  cn hunteck
hgn093n12sl.pdf pdf_icon

HGN095NE4SL

HGN093N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 71 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re

 9.3. Size:1175K  cn hunteck
hgn098n10al.pdf pdf_icon

HGN095NE4SL

HGN098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited) Application Synch

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