HGN095NE4SL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HGN095NE4SL
Маркировка: GN095NE4SL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 14.5 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 309 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN095NE4SL
HGN095NE4SL Datasheet (PDF)
hgn095ne4sl.pdf
HGN095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level6.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness52 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn098n10a.pdf
HGN098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.3RDS(on),typ mW Enhanced Body diode dv/dt capability63 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H
hgn093n12sl.pdf
HGN093N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness71 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
hgn098n10al.pdf
HGN098N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited)Application Synch
hgn090n06sl.pdf
HGN090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn090ne6al.pdf
HGN090NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited)Application Drain Syn
hgn098n10sl.pdf
HGN098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous R
hgn099n15s.pdf
HGN099N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 80 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha
hgn093n12s.pdf
HGN093N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability73 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi
hgn090ae6al.pdf
HGN090AE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited)Drain1 Drain2 Application
hgn090ne6a.pdf
HGN090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and Hig
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