HGN098N10A Todos los transistores

 

HGN098N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN098N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 262 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN098N10A Datasheet (PDF)

 ..1. Size:893K  cn hunteck
 hgn098n10a.pdf pdf_icon

HGN098N10A

HGN098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.3RDS(on),typ mW Enhanced Body diode dv/dt capability63 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

 0.1. Size:1175K  cn hunteck
 hgn098n10al.pdf pdf_icon

HGN098N10A

HGN098N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited)Application Synch

 5.1. Size:897K  cn hunteck
 hgn098n10sl.pdf pdf_icon

HGN098N10A

HGN098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous R

 9.1. Size:902K  cn hunteck
 hgn093n12sl.pdf pdf_icon

HGN098N10A

HGN093N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness71 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

MOSTRAR MÁS

Otros transistores... HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL , HGN095NE4SL , IRFP250N , HGN098N10AL , HGN098N10SL , HGN099N15S , HGN100N12S , HGN100N12SL , HGN110N08A , HGN110N08AL , HGN110N10SL .

History: SP8M3 | QM3001V | STL70N10F3 | AUIRF7640S2 | MGSF1N02ELT1 | 2SK1662M | NTMFS4837NT1G

 

 
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