HGS080N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGS080N10AL
Código: GS080N10AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 32 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 348 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: SOIC-8
Búsqueda de reemplazo de MOSFET HGS080N10AL
HGS080N10AL Datasheet (PDF)
hgs080n10al.pdf
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hgs080n10sl.pdf
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