HGS080N10AL Datasheet. Specs and Replacement

Type Designator: HGS080N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOIC-8

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HGS080N10AL datasheet

 ..1. Size:907K  cn hunteck
 hgs080n10al.pdf pdf_icon

HGS080N10AL

HGS080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14.4 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

 5.1. Size:917K  cn hunteck
 hgs080n10sl.pdf pdf_icon

HGS080N10AL

HGS080N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching an... See More ⇒

 9.1. Size:926K  cn hunteck
 hgs085n10sl.pdf pdf_icon

HGS080N10AL

HGS085N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 7.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

 9.2. Size:927K  cn hunteck
 hgs085ne6al.pdf pdf_icon

HGS080N10AL

HGS085NE6AL P-1 70V N-Ch Power MOSFET Feature 70 V VDS High Speed Power Switching,Logic Level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application SOIC-8 Synchronous Rectification in SMPS Drain... See More ⇒

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Detailed specifications: HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, HGS060N06SL, HGS063N08SL, 7N60, HGS080N10SL, HGS085N10SL, HGS085NE6AL, HGS089N08SL, HGS090N06SL, HGS090NE6A, HGS090NE6AL, HGS092NE6AL

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