HGS089N08SL Todos los transistores

 

HGS089N08SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGS089N08SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 247 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
   Paquete / Cubierta: SOIC-8
 

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HGS089N08SL Datasheet (PDF)

 ..1. Size:908K  cn hunteck
 hgs089n08sl.pdf pdf_icon

HGS089N08SL

HGS089N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and

 9.1. Size:917K  cn hunteck
 hgs080n10sl.pdf pdf_icon

HGS089N08SL

HGS080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching an

 9.2. Size:907K  cn hunteck
 hgs080n10al.pdf pdf_icon

HGS089N08SL

HGS080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14.4 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 9.3. Size:926K  cn hunteck
 hgs085n10sl.pdf pdf_icon

HGS089N08SL

HGS085N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

MOSTRAR MÁS

Otros transistores... HGS059N08A , HGS059N08AL , HGS060N06SL , HGS063N08SL , HGS080N10AL , HGS080N10SL , HGS085N10SL , HGS085NE6AL , 60N06 , HGS090N06SL , HGS090NE6A , HGS090NE6AL , HGS092NE6AL , HGS095NE4SL , HGS098N06SL , HGS098N10A , HGS098N10AL .

History: LSE60R240HT | IXTM10N60 | SM6A24NSU | STD100NH02LT4 | BLP038N10GL-D | RSM5853P | NCE65NF068LL

 

 
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