HGS090N06SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGS090N06SL
   Código: GS090N06SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 415 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SOIC-8

Búsqueda de reemplazo de MOSFET HGS090N06SL

HGS090N06SL Datasheet (PDF)

..1. Size:817K cn hunteck
hgs090n06sl.pdf

HGS090N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching,Logic level 7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2

7.1. Size:919K cn hunteck
hgs090ne6al.pdf

HGS090NE6AL P-168V N-Ch Power MOSFETFeature68 VVDS High Speed Power Switching,Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

7.2. Size:906K cn hunteck
hgs090ne6a.pdf

HGS090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8

9.1. Size:912K cn hunteck
hgs098n10a.pdf

HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2

9.2. Size:915K cn hunteck
hgs098n10sl.pdf

HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

9.3. Size:951K cn hunteck
hgs092ne6al.pdf

HGS092NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching,Logic Level8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainSOIC-8Application Synchronous Rectification i

9.4. Size:901K cn hunteck
hgs095ne4sl.pdf

HGS095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.5 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swi

9.5. Size:936K cn hunteck
hgs098n06sl.pdf

HGS098N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.8 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard S

9.6. Size:907K cn hunteck
hgs098n10al.pdf

HGS098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.9 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

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