HGS090N06SL Datasheet. Specs and Replacement

Type Designator: HGS090N06SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOIC-8

HGS090N06SL substitution

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HGS090N06SL datasheet

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HGS090N06SL

HGS090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 14 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 ... See More ⇒

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Detailed specifications: HGS059N08AL, HGS060N06SL, HGS063N08SL, HGS080N10AL, HGS080N10SL, HGS085N10SL, HGS085NE6AL, HGS089N08SL, IRF9640, HGS090NE6A, HGS090NE6AL, HGS092NE6AL, HGS095NE4SL, HGS098N06SL, HGS098N10A, HGS098N10AL, HGS098N10SL

Keywords - HGS090N06SL MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.