FDS8984F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS8984F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SO-8

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FDS8984F085 Datasheet (PDF)

7.1. Size:384K fairchild semi
fds8984.pdf

May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

7.2. Size:440K fairchild semi
fds8984 f085.pdf

Fabruary 2010FDS8984_F085tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti

7.3. Size:423K onsemi
fds8984-f085.pdf

FDS8984-F085N-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate c

7.4. Size:384K onsemi
fds8984.pdf

7.5. Size:850K cn vbsemi
fds8984-nl.pdf

FDS8984-NLwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Otros transistores... SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , IRFB7545 , SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 .

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