All MOSFET. FDS8984F085 Datasheet

 

FDS8984F085 Datasheet and Replacement


   Type Designator: FDS8984F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.2 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8
 

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FDS8984F085 Datasheet (PDF)

 7.1. Size:384K  fairchild semi
 fds8984.pdf pdf_icon

FDS8984F085

May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

 7.2. Size:440K  fairchild semi
 fds8984 f085.pdf pdf_icon

FDS8984F085

Fabruary 2010FDS8984_F085tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti

 7.3. Size:423K  onsemi
 fds8984-f085.pdf pdf_icon

FDS8984F085

FDS8984-F085N-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate c

 7.4. Size:384K  onsemi
 fds8984.pdf pdf_icon

FDS8984F085

May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

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History: IRLR024A | CS7Y1905C | FS70VSJ-06F

Keywords - FDS8984F085 MOSFET datasheet

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