HGW053N06SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGW053N06SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 105 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 793 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm

Encapsulados: TO-262

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HGW053N06SL datasheet

 ..1. Size:773K  cn hunteck
 hgw053n06sl.pdf pdf_icon

HGW053N06SL

HGW053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.1 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 105 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai

 9.1. Size:805K  cn hunteck
 hgw059n12sl.pdf pdf_icon

HGW053N06SL

HGW059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level 5 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and

 9.2. Size:803K  cn hunteck
 hgw059n12s.pdf pdf_icon

HGW053N06SL

HGW059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 113 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed

 9.3. Size:786K  cn hunteck
 hgw055n10sl.pdf pdf_icon

HGW053N06SL

HGW055N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.9 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8 RDS(on),typ VGS=4.5V m switching,Logic level 153 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 120 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion D

MOSTRAR MÁS

Otros transistores... HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S, HGT055N15S, 8205A, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S