HGW053N06SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGW053N06SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 793 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: TO-262
Аналог (замена) для HGW053N06SL
HGW053N06SL Datasheet (PDF)
hgw053n06sl.pdf

HGW053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai
hgw059n12sl.pdf

HGW059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and
hgw059n12s.pdf

HGW059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness113 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed
hgw055n10sl.pdf

HGW055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 153 AID (Sillicon Limited) Enhanced Body diode dv/dt capability120 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion D
Другие MOSFET... HGT015N10S , HGT016NE6A , HGT019N08A , HGT022N12S , HGT025N10A , HGT035N12S , HGT041N15S , HGT055N15S , 2SK3878 , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M , HGW105N15SL , HGW130N12S .
History: MEE2348-G | STD100N03LT4 | STW75N60M6 | IXTK120N25P | SSM6P15FU | HGP059N08A | SWN7N65K2
History: MEE2348-G | STD100N03LT4 | STW75N60M6 | IXTK120N25P | SSM6P15FU | HGP059N08A | SWN7N65K2



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