HGW055N10SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGW055N10SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 323 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO-262

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HGW055N10SL datasheet

 ..1. Size:786K  cn hunteck
 hgw055n10sl.pdf pdf_icon

HGW055N10SL

HGW055N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.9 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8 RDS(on),typ VGS=4.5V m switching,Logic level 153 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 120 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion D

 9.1. Size:805K  cn hunteck
 hgw059n12sl.pdf pdf_icon

HGW055N10SL

HGW059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level 5 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and

 9.2. Size:773K  cn hunteck
 hgw053n06sl.pdf pdf_icon

HGW055N10SL

HGW053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.1 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 105 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai

 9.3. Size:803K  cn hunteck
 hgw059n12s.pdf pdf_icon

HGW055N10SL

HGW059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 113 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed

MOSTRAR MÁS

Otros transistores... HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S, HGT055N15S, HGW053N06SL, 7N65, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, HGW190N15S