All MOSFET. HGW055N10SL Datasheet

 

HGW055N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGW055N10SL
   Marking Code: GW055N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-262

 HGW055N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGW055N10SL Datasheet (PDF)

 ..1. Size:786K  cn hunteck
 hgw055n10sl.pdf

HGW055N10SL HGW055N10SL

HGW055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 153 AID (Sillicon Limited) Enhanced Body diode dv/dt capability120 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion D

 9.1. Size:805K  cn hunteck
 hgw059n12sl.pdf

HGW055N10SL HGW055N10SL

HGW059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and

 9.2. Size:773K  cn hunteck
 hgw053n06sl.pdf

HGW055N10SL HGW055N10SL

HGW053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

 9.3. Size:803K  cn hunteck
 hgw059n12s.pdf

HGW055N10SL HGW055N10SL

HGW059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness113 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed

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