HGW100N12SL Todos los transistores

 

HGW100N12SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGW100N12SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 109 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 242 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

HGW100N12SL Datasheet (PDF)

 ..1. Size:787K  cn hunteck
 hgw100n12sl.pdf pdf_icon

HGW100N12SL

HGW100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

 4.1. Size:780K  cn hunteck
 hgw100n12s.pdf pdf_icon

HGW100N12SL

HGW100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-262 8.6RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2TO-262

 9.1. Size:804K  cn hunteck
 hgw105n15m.pdf pdf_icon

HGW100N12SL

HGW105N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-262 8.8RDS(on),typ m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2

 9.2. Size:808K  cn hunteck
 hgw105n15sl.pdf pdf_icon

HGW100N12SL

HGW105N15SLP-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level9RDS(on),typ m Enhanced Body diode dv/dt capability9ID (Sillicon Limited) m Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFH7921PBF | HUF75623P3 | HUF76129D3 | AON3806 | SSG4394N | CEP1195 | STS4DPF30L

 

 
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