HTN020N03 Todos los transistores

 

HTN020N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HTN020N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 933 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

HTN020N03 Datasheet (PDF)

 ..1. Size:917K  cn hunteck
 htn020n03.pdf pdf_icon

HTN020N03

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 6.1. Size:773K  cn hunteck
 htn020n04p.pdf pdf_icon

HTN020N03

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

 9.1. Size:918K  cn hunteck
 htn027n03p.pdf pdf_icon

HTN020N03

HTN027N03P P-130V N-Ch Power MOSFET30 VVDSFeature2.9RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability122 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Sw

 9.2. Size:871K  cn hunteck
 htn021n03.pdf pdf_icon

HTN020N03

HTN021N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BRCS4828SC | PMPB12UNEA | SSF2701 | CEM0215 | HAT2191WP | 2N6904 | 2SK1416

 

 
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