HTN020N03 datasheet, аналоги, основные параметры

Наименование производителя: HTN020N03

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 933 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm

Тип корпуса: DFN5X6

Аналог (замена) для HTN020N03

- подборⓘ MOSFET транзистора по параметрам

 

HTN020N03 даташит

 ..1. Size:917K  cn hunteck
 htn020n03.pdf pdf_icon

HTN020N03

HTN020N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 1.6 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number P

 6.1. Size:773K  cn hunteck
 htn020n04p.pdf pdf_icon

HTN020N03

HTN020N04P P-1 40V N-Ch Power MOSFET 40 V VDS Feature 1.4 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 1.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 181 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Sync

 9.1. Size:918K  cn hunteck
 htn027n03p.pdf pdf_icon

HTN020N03

HTN027N03P P-1 30V N-Ch Power MOSFET 30 V VDS Feature 2.9 RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability 122 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Sw

 9.2. Size:871K  cn hunteck
 htn021n03.pdf pdf_icon

HTN020N03

HTN021N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 1.8 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number P

ПОКАЗАТЬ ЕЩЁ

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