HTN027P02 Todos los transistores

 

HTN027P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HTN027P02
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 1303 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

HTN027P02 Datasheet (PDF)

 ..1. Size:552K  cn hunteck
 htn027p02.pdf pdf_icon

HTN027P02

HTN027P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness2.7RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ VGS=-2.5V m Lead Free, Halogen Free-100 AID (Sillicon Limited)DrainApplication Hard Switching and High Speed Circuit

 8.1. Size:918K  cn hunteck
 htn027n03p.pdf pdf_icon

HTN027P02

HTN027N03P P-130V N-Ch Power MOSFET30 VVDSFeature2.9RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability122 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Sw

 9.1. Size:773K  cn hunteck
 htn020n04p.pdf pdf_icon

HTN027P02

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

 9.2. Size:871K  cn hunteck
 htn021n03.pdf pdf_icon

HTN027P02

HTN021N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2202 | SIHF10N40D

 

 
Back to Top

 


 
.