HTN027P02 Datasheet. Specs and Replacement

Type Designator: HTN027P02

Marking Code: TN027P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

Qg ⓘ - Total Gate Charge: 202 nC

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1303 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: DFN5X6

HTN027P02 substitution

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HTN027P02 datasheet

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 htn027p02.pdf pdf_icon

HTN027P02

HTN027P02 P-1 20V P-Ch Power MOSFET Feature -20 V VDS High Speed Power Switching, Logic Level 2.4 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 2.7 RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested 3.4 RDS(on),typ VGS=-2.5V m Lead Free, Halogen Free -100 A ID (Sillicon Limited) Drain Application Hard Switching and High Speed Circuit ... See More ⇒

 8.1. Size:918K  cn hunteck
 htn027n03p.pdf pdf_icon

HTN027P02

HTN027N03P P-1 30V N-Ch Power MOSFET 30 V VDS Feature 2.9 RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability 122 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Sw... See More ⇒

 9.1. Size:773K  cn hunteck
 htn020n04p.pdf pdf_icon

HTN027P02

HTN020N04P P-1 40V N-Ch Power MOSFET 40 V VDS Feature 1.4 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 1.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 181 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Sync... See More ⇒

 9.2. Size:871K  cn hunteck
 htn021n03.pdf pdf_icon

HTN027P02

HTN021N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 1.8 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number P... See More ⇒

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Detailed specifications: HTM150A02, HTM200N03, HTM200P03, HTN019N03P, HTN020N03, HTN020N04P, HTN021N03, HTN027N03P, AO4468, HTN030N03, HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10

Keywords - HTN027P02 MOSFET specs

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