HTN030N03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HTN030N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 381 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: DFN5X6

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HTN030N03 datasheet

 ..1. Size:914K  cn hunteck
 htn030n03.pdf pdf_icon

HTN030N03

HTN030N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 75 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number Pa

 9.1. Size:573K  cn hunteck
 htn036p03.pdf pdf_icon

HTN030N03

HTN036P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.6 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -80 A ID (Sillicon Limited) Lead Free, Halogen Free Application Drain Hard Switching and High Speed Circuit DFN5x6 DC/DC in Telecoms and Indu

 9.2. Size:1040K  cn hunteck
 htn036n03p.pdf pdf_icon

HTN030N03

HTN036N03P P-1 30V N-Ch Power MOSFET 30 V Feature VDS 3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW 5.4 RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability 70 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi

 9.3. Size:1310K  cn hunteck
 htn035n04p.pdf pdf_icon

HTN030N03

HTN035N04P P-1 40V N-Ch Power MOSFET 40 V Feature VDS 3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW 7.4 RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability 95 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swi

MOSTRAR MÁS

Otros transistores... HTM200N03, HTM200P03, HTN019N03P, HTN020N03, HTN020N04P, HTN021N03, HTN027N03P, HTN027P02, IRF730, HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, HTS050N03