HTN030N03 datasheet, аналоги, основные параметры

Наименование производителя: HTN030N03

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 381 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm

Тип корпуса: DFN5X6

Аналог (замена) для HTN030N03

- подборⓘ MOSFET транзистора по параметрам

 

HTN030N03 даташит

 ..1. Size:914K  cn hunteck
 htn030n03.pdf pdf_icon

HTN030N03

HTN030N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 75 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number Pa

 9.1. Size:573K  cn hunteck
 htn036p03.pdf pdf_icon

HTN030N03

HTN036P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.6 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -80 A ID (Sillicon Limited) Lead Free, Halogen Free Application Drain Hard Switching and High Speed Circuit DFN5x6 DC/DC in Telecoms and Indu

 9.2. Size:1040K  cn hunteck
 htn036n03p.pdf pdf_icon

HTN030N03

HTN036N03P P-1 30V N-Ch Power MOSFET 30 V Feature VDS 3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW 5.4 RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability 70 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi

 9.3. Size:1310K  cn hunteck
 htn035n04p.pdf pdf_icon

HTN030N03

HTN035N04P P-1 40V N-Ch Power MOSFET 40 V Feature VDS 3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW 7.4 RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability 95 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swi

ПОКАЗАТЬ ЕЩЁ

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