FDS9945 Todos los transistores

 

FDS9945 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS9945

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.3 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SO-8

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FDS9945 datasheet

 ..1. Size:73K  fairchild semi
fds9945.pdf pdf_icon

FDS9945

February 2001 FDS9945 60V N-Channel PowerTrench MOSFET General Description Features 3.5 A, 60 V. R = 0.100 @ V = 10 V DS(ON) GS These N Channel Logic Level MOSFET have been R = 0.200 @ V = 4.5V DS(ON) GS designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or Optimized for use in switching DC/DC converters co

 ..2. Size:169K  onsemi
fds9945.pdf pdf_icon

FDS9945

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 0.1. Size:913K  cn vbsemi
fds9945-nl.pdf pdf_icon

FDS9945

FDS9945-NL www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann

 9.1. Size:162K  fairchild semi
fds9934c.pdf pdf_icon

FDS9945

March 2006 FDS9934C Complementary Features These dual N- and P-Channel enhancement mode Q1 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V power field effect transistors are produced using RDS(ON) = 43 m @ VGS = 2.5 V. Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching perf

Otros transistores... SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 , IRFZ44N , FDS9953A , FDS9958 , FDS9958F085 , FDSS2407 , FDT3612 , SDU04N65 , FDT3N40 , SDU04N60 .

History: TSU45N60

 

 

 


History: TSU45N60

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