HTN036P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HTN036P03
   Código: TN036P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 96.5 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 913 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET HTN036P03

HTN036P03 Datasheet (PDF)

..1. Size:573K cn hunteck
htn036p03.pdf

HTN036P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.6RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-80 AID (Sillicon Limited) Lead Free, Halogen FreeApplicationDrain Hard Switching and High Speed CircuitDFN5x6 DC/DC in Telecoms and Indu

8.1. Size:1040K cn hunteck
htn036n03p.pdf

HTN036N03P P-130V N-Ch Power MOSFET30 VFeature VDS3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW5.4RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability70 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

9.1. Size:1310K cn hunteck
htn035n04p.pdf

HTN035N04P P-140V N-Ch Power MOSFET40 VFeature VDS3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW7.4RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability95 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi

9.2. Size:914K cn hunteck
htn030n03.pdf

HTN030N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness75 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number Pa

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